The Allegro® A1101-A1104 and A1106 Hall-effect switches are next generation replacements for the popular Allegro 312x and 314x lines of bipolar switches. The A110x family, produced with BiCMOS technology, consists of devices that feature fast power-on time and low noise operation. Device programming is per- formed after packaging, to ensure increased switchpoint accuracy by eliminating offsets that can be induced by package stress. Unique Hall element geometries and low-offset amplifiers help to minimize noise and to reduce the residual offset volt- age normally caused by device overmolding, temperature excursions, and thermal stress.
The A1101-A1104 and A1106 Hall-effect switches include the following on a single silicon chip: voltage regulator, Hall-voltage generator, small-signal ampli- fier, Schmitt trigger, and NMOS output transistor. The integrated voltage regulator permits operation from 3.8 to 24 V. The extensive on-board protection circuitry makes possible a ±30 V absolute maximum voltage rating for superior protection in automotive and industrial motor commutation applications, without adding external components. All devices in the family are identical except for magnetic switchpoint levels.
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Continuous-time operation Fast power-on time Low noise Stable operation over full operating temperature range Reverse battery protection Solid-state reliability Factory-programmed at end-of-line for optimum performance Robust EMC performance High ESD rating Regulator stability without a bypass capacitor
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Supply Voltage, VCC .......................................... 30 V
Reverse-Supply Voltage, VRCC ........................30 V
Output Off Voltage, VOUT....................................30 V
Reverse-Output Voltage, VROUT .....................0.5 V
Output Current, IOUTSINK..................................25 mA
Magnetic Flux Density, B ..................................nlimited
Operating Temperature
Ambient, TA, Range E...........................40ºC to 85ºC
Ambient, TA, Range L.........................40ºC to 150ºC
Maximum Junction, TJ(max)
........................165ºC
Storage Temperature, TS ..................65ºC to 170ºC
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Required Field 
